bfx29 mechanical data dimensions in mm (inches) document number 3083 issue 2 semelab plc. telephone +44(0)1455) 556565. fax +44(0)1455) 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. v cbo collector ? base voltage v ceo collector ? emitter voltage v ebo emitter ? base voltage i c collector current continuous i cm collector current peak i em emitter current peak p tot total power dissipation t amb < 25c t stg storage temperature t j operating junction temperature 60v 60v 5v 600ma 600ma 600ma 600 mw ?65 to 200c 200c pnp silicon epitaxial transistor absolute maximum ratings (t case = 25c unless otherwise stated) applications general purpose industrial applications 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) to39 package pin 1 = emitter pin 2 = base pin 3 = collector
semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. parameter test conditions min. typ. max. unit electrical characteristics (t j = 25 c unless otherwise stated) bfx29 document number 3083 issue 2 semelab plc. telephone +44(0)1455) 556565. fax +44(0)1455) 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk v eb = 5.0v i c = 0 v eb = 3v i c = 0 v cb =60v i e = 0 v cb =50v i e = 0 t j = 100 c v ce =10v i c = 0.1ma v ce = 10v i c = 1ma v ce = 10v i c = 10ma v ce =10v i c = 50ma v ce = 10v i c = 150ma i c = 150ma i b = 15ma i c = 30ma i b = 1.0ma i c = 150ma i b = 15ma v cb = 10v i e = i e =0 f=1.0mh z v eb = 2.0v i c = i c =0 f=1.0mh z v ce = 10v i c = 50ma f=100mh z t amb = 25 c emitter cut ? off current collector cut ? off current dc current gain collector ? emitter saturation voltage base ? emitter saturation voltage collector capactitance emitter capactitance transistion frequency 30 500 1.0 100 1.0 500 0.5 50 0.03 2.0 20 90 40 105 50 125 50 125 40 90 0.15 0.40 0.77 0.90 1.05 1.30 612 18 30 100 360 na na a ? v v pf mhz i ebo i cbo h fe v ce(sat) v be(sat) c tc c te f t thermal characteristics r th(j-amb) thermal resistance junction to ambient 292 c/w
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